ECE 682 - Field-Effect Devices

(4 credits)

Electronic structure of semiconductor surfaces. Concepts of surface states and surface change. Metal-Semi-conductor (MS) contacts: ohmic and rectifying. Conductivity modulation and the theory of JFET and MESFET transistors. Integrated device technology, including Silicon on Sapphire (SOS) and Silicon on Insulator (SOI) structures and their application. Previously EE 682. Credit cannot be received for both ECE 682 and EE 682.

Prerequisite(s): Student must meet prerequisites (ECE 581 and at least one course from the core and theory group of courses).

Course revisions made after the Graduate Catalog publication date will be posted in the Graduate Catalog Addendum.